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J110 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor | |||
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J110
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J110
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J110 Benefits:
 Low On Resistance
 Low insertion loss
 Low Noise
J110 Applications:
 Analog Switches
 Commutators
 Choppers
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J110
LOW ON RESISTANCE
rDS(on) ⤠18Ω
FAST SWITCHING
t(on) ⤠4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
â55°C to +150°C
â55°C to +150°C
350mW
50mA
VGDS = â25V
VGSS = â25V
J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
BVGSS
Gate to Source Breakdown Voltage
â25
ââ
ââ
VGS(off)
Gate to Source Cutoff Voltage
â0.5
ââ
â4
VGS(F)
Gate to Source Forward Voltage
ââ
0.7
ââ
IDSS
Drain to Source Saturation Current (Note 2) 10
ââ
ââ
IGSS
Gate Reverse Current
ââ
â0.01
â3
IG
Gate Operating Current
ââ
â0.01
ââ
ID(off)
Drain Cutoff Current
ââ
0.02
3
Click To rDS(on)
Drain to Source On Resistance
ââ
ââ
J110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
gfs
Forward Transconductance
ââ
17
18
MAX
ââ
gos
Output Conductance
ââ
0.6
ââ
rDS(on)
Drain to Source On Resistance
ââ
ââ
18
Ciss
Input Capacitance
ââ
60
ââ
Crss
Reverse Transfer Capacitance
ââ
11
ââ
en
Equivalent Noise Voltage
ââ
3.5
ââ
UNITS
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
V
IG = 1mA, VDS = 0V
mA
VDS = 15V, VGS = 0V
VGS = â15V, VDS = 0V
nA
VDG = 10V, ID = 10mA
VDS = 5V, VGS = â10V
Buy Ω
UNITS
mS
VGS = 0V, VDS ⤠0.1V
CONDITIONS
VDS = 5V, ID = 10mA , f = 1kHz
Ω
pF
nV/âHz
VGS = 0V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = â10V, f = 1MHz
VDS = 5V, ID = 10mA , f = 1kHz
J110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
td(on)
Turn On Time
3
tr
Turn On Rise Time
1
ns
td(off)
Turn Off Time
4
tf
Turn Off Fall Time
18
VDD = 1.5V
VGS(H) = 0V
See Switching Circuit
Note 1 â Absolute maximum ratings are limiting values above which J110 serviceability may be impaired. Note 2 â Pulse test: PW⤠300 µs, Duty Cycle ⤠3%
J110 SWITCHING CIRCUIT PARAMETERS
VGS(L)
RL
ID(on)
â5V
150Ω
10mA
Available Packages:
J110 in SOT-23
J110 in bare die.
SOT-23 (Top View)
SWITCHING TEST CIRCUIT
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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