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IT124_PDIP Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL NPN TRANSISTOR | |||
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IT124
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT124
The IT124 is a monolithic pair of Super-Beta NPN
transistors mounted in a single P-DIP package. The
monolithic dual chip design reduces parasitics and
gives better performance while ensuring extremely tight
matching. The IT124 is a direct replacement for
discontinued Intersil IT124.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
IT124 Features:
 Very high gain
 Tight matching
 Low Output Capacitance
FEATURES
Direct Replacement for INTERSIL IT124
HIGH GAIN
LOW OUTPUT CAPACITANCE
VBE tracking
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
hFE ⥠1500 @ 1 AND 10µA
⤠2.0pF
⤠5.0µV°C
â65°C to +200°C
â55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 â VBE2 |
Base Emitter Voltage Differential
ââ
2
5
mV
IC = 10µA, VCE = 1V
â|(VBE1 â VBE2)| / âT
Base Emitter Voltage Differential
Change with Temperature
ââ
5
15
µV/°C
IC = 10µA, VCE = 1V
TA = â55°C to +125°C
Click To Buy |IB1âIB2|
Base Current Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVCBO
Collector to Base Voltage
2
ââ
ââ
0.6
TYP.
MAX. UNITS
ââ
ââ
V
nA
IC = 10µA, VCE = 1V
CONDITIONS
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
2
ââ
ââ
V
BVEBO
EmitterâBase Breakdown Voltage
6.2
ââ
ââ
V
BVCCO
Collector to Collector Voltage
100
ââ
ââ
V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
hFE
DC Current Gain
1500
ââ
ââ
IC = 1µA, VCE = 1V
1500
ââ
ââ
IC = 10µA, VCE = 1V
VCE(SAT)
Collector Saturation Voltage
ââ
ââ
0.5
V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
ââ
ââ
100
pA
ICBO
Collector Cutoff Current
ââ
ââ
100
pA
IC = 0, VEB = 3V
IE = 0, VCB = 1V
COBO
Output Capacitance
ââ
ââ
2
pF
IE = 0, VCB = 1V
CC1C2
Collector to Collector Capacitance
ââ
ââ
2
pF
IC1C2
Collector to Collector Leakage Current
ââ
ââ
10
nA
VCC = 0V
VCC = ±50V
fT
Current Gain Bandwidth Product
100
ââ
ââ
MHz
IC = 100µA, VCE = 1V
NF
Narrow Band Noise Figure
ââ
ââ
3
dB
IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse baseâtoâemitter voltage must never exceed 6.2 volts; the reverse baseâtoâemitter current must never exceed 10µA.
Available Packages:
IT124 in P-DIP
IT124 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
P-DIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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