ICE35N60W Datasheet, PDF (1/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE35N60W
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
I_D
V_(BR)DSS
r_DS(ON)
Q_g
T_A = 25°C
I_D = 250uA
V_GS = 10V
V_DS = 480V
35A
600V
0.075Ω
187nC
Pin Description:
G
TO-247
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
I_D
I_D, pulse
E_AS
I_AR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
V_GS
P_tot
T_j, T_stg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
35
103
1100
18
50
±20
±30
313
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
T_C = 25°C
T_C = 25°C
I_D = 18A
Limited by T_jmax
V_DS = 480V, I_D = 35A, T_j = 125°C
Static
AC (f>Hz)
T_C = 25°C
M 2.5 screws
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Thermal Characteristics
R_thJC
Thermal Resistance, Junction to Case
R_thJA
Thermal Resistance, Junction to Ambient
T_sold
Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
-
0.3
-
-
50
-
- 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V_(BR)DSS
V_GS(th)
I_DSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 640 -
2.1 3 3.9
-
0.5 10
-
- 250
I_GSS
R_DS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
-
- 200
- 0.075 0.09
-
0.2
-
R_GS
Gate Resistance
-
6
-
Unit Conditions
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V
V_GS = 0V, I_D = 1mA
V_DS = V_GS, I_D = 250µA
µA
V_DS = 600V, V_GS = 0V, T_j = 25°C
V_DS = 600V, V_GS = 0V, T_j = 150°C
nA V_GS = ±20v, V_DS = 0V
Ω
V_GS = 10V, I_D = 18A, T_j = 25°C
V_GS = 10V, I_D = 18A, T_j = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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