ICE20N170B Datasheet, PDF (1/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE20N170B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
I_D
V_(BR)DSS
r_DS(ON)
Q_g
T_A = 25°C
I_D = 250uA
V_GS = 10V
V_DS = 480V
20A
600V
0.17Ω
62nC
Pin Description:
G
TO-263
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
I_D
I_D, pulse
E_AS
I_AR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
V_GS
P_tot
T_j, T_stg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
20
62
520
20
50
±20
±30
208
-55 to +150
A T_C = 25°C
A T_C = 25°C
mJ I_D = 8.5A
A Limited by T_jmax
V/ns V_DS = 480V, I_D = 17A, T_j = 125°C
Static
V
AC (f>Hz)
W T_C = 25°C
°C
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Thermal Characteristics
R_thJC
Thermal Resistance, Junction to Case
-
R_thJA
Thermal Resistance, Junction to Ambient
-
T_sold
Soldering Temperature, Wave Soldering Only
-
Allowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V_(BR)DSS
Drain to Source Breakdown Voltage
600
V_GS(th)
Gate Threshold Voltage
2.1
I_DSS
Zero Gate Voltage Drain Current
-
-
I_GSS
Gate Source Leakage Current
-
R_DS(on)
Drain to Source On-State Resistance
-
-
R_GS
Gate Resistance
-
-
0.7
-
62
- 260
640 -
3 3.9
0.1 1
- 100
- 100
0.17 0.199
0.52 -
4.3 -
Unit Conditions
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V
V_GS = 0V, I_D = 250µA
V_DS = V_GS, I_D = 250µA
µA
V_DS = 600V, V_GS = 0V, T_j = 25°C
V_DS = 600V, V_GS = 0V, T_j = 150°C
nA V_GS = ±20v, V_DS = 0V
Ω
V_GS = 10V, I_D = 10A, T_j = 25°C
V_GS = 10V, I_D = 10A, T_j = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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