ASJE1200R063 Datasheet, PDF (1/7 Pages) Micross Components – Positive Temperature Coeffi cient for Ease of Paralleling

ADVANCE INFORMATION SiC JFET
ASJE1200R063
Normally-OFF Trench Silicon
Carbide Power JFET
FEATURES:
Die Inside
• Hermetic TO-258 Packaging
• 200°C Maximum Operating Temperature (for 260^oC Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Positive Temperature Coefficient for Ease of Paralleling
• Compatible with Standard Gate Driver ICs
• Temperature Independent Switching Behavior
• Extremely Fast Switching
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• 1200 Volt Drain-Source Blocking Voltage
• RDS_(on)max of 0.063 
• Voltage Controlled
• Low Gate Charge
• Low Intrinsic Capacitance
ProductSummary
BV_DS
1200
V
RDS_(ON)max 0.063
:
E_TS,typ
440
μJ
D (2,4)
G (1)
APPLICATIONS:
TO-258
• Satellite Solar Inverters
• Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
123
S (3)
Internal Schematic
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Value
Unit
ContinuousDrainCurrent
PulsedDrainCurrent^(1)
I_D,Tj=125
I_D,Tj=175
I_DM
T_j=125°C
T_j=175°C
T_c=25°C
30
A
20
60
A
ShortCircuitWithstandTime
PowerDissipation
t_SC
V_DD<800V,T_C<125°C
50
μS
P_D
T_c=25°C
250
W
GateͲSourceVoltage
OperatingandStorageTemperature
LeadTemperatureforSoldering
(1)Limitedbypulsewidth
Static
Ͳ15to+3
V
V_GS
AC⁽²⁾
Ͳ15to+15
V
T_j,T_j,stg
Ͳ55to+200* ^oC
T_sold
1/8"fromcase<10s
260
o_C
(2)Rg_EXT=0.5ohm,t_p<200ns
*Contactfactoryfor260^oC
THERMAL CHARACTERISTICS
Parameter
ThermalResistance,junctionͲtoͲcase
ThermalResistance,junctionͲtoͲambient
Symbol
R_th,JC
R_th,JA
Value
Typ
Max
Ͳ
TBD
Ͳ
TBD
Unit
°C/W
For more products and
information, please visit our
website at www.micross.com
ASJE1200R063
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
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