AS8SLC512K32 Datasheet, PDF (1/12 Pages) Austin Semiconductor – 512K x 32 SRAM SRAM Memory Array MCM

512K x 32 SRAM
SRAM Memory Array MCM
FEATURES
• Fast access times: 10, 12, 15, 17 and 20ns
• Fast OE\ access times: 6ns
• Ultra-low operating power < 1W worst case
• Single +3.3V ±0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Easy memory expansion with CE\ and OE\ options
• Automatic CE\ power down
• High-performance, low-power consumption, CMOS
OPTIONS
•
Timing
10ns
12ns
15ns
17ns
20ns
MARKINGS
-10
-12
-15
-17
-20
•
Package
Ceramic Quad Flatpack
Q No. 702
Ceramic Quad Flatpak(.054min SO) Q1
Pin Grid Array
P No.904
•
Operating Temperature Ranges
Military (-55^oC to +125^oC)
XT
Industrial (-40^oC to +85^oC)
IT
• 2V data retention/low power
L
GENERAL DESCRIPTION
The AS8SLC512K32 is a 3.3V 16 Megabit CMOS SRAM
Module organized as 512Kx32 bits. The AS8SLC512K32 achieves
very high speed access, low powerconsumption and high reliability
by employing advanced CMOS memory technology.
This military temperature grade product is ideally suited for
commercial, industrial, and military applications when asynchronous
high speed switching and low ACTIVE opening power & ultra Fast
Asynchronous Access is mandated.
For more products and information
please visit our web site at
www.micross.com
AS8SLC512K32
Rev. 2.6 01/10
1
SRAM
AS8SLC512K32
PIN ASSIGNMENT
(Top View)
68 Lead CQFP (Q & Q1)
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
109 ^{8 7 6 5 4 3 2 1 68 67 66 65 64 63 6620 61}
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
66 Lead PGA (P)
CS
CS
\
CS
CS
M4
M3
M2
M1
BLOCK DIAGRAM
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