AS8F128K32 Datasheet, PDF (1/22 Pages) Austin Semiconductor – 128K x 32 FLASH FLASH MEMORY ARRAY

FLASH
AS8F128K32
128K x 32 FLASH
FLASH MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-94716
• MIL-STD-883
FEATURES
• Fast Access Times: 60, 70, 90, 120 and 150ns
• Operation with single 5V (±10%)
• Compatible with JEDEC EEPROM command set
• Any Combination of Sectors can be Erased
• Supports Full Chip Erase
• Embedded Erase and Program Algorithms
• TTL Compatible Inputs and CMOS Outputs
• Hardware Data Protection
• Data\ Polling and Toggle Bits
• Low Power consumption
• Individual Byte Read/ Write Control
• Minimum 1,000,000 Program/Erase Cycles per sector
guaranteed
OPTIONS
• Timing
60ns
70ns
90ns
120ns
150ns
MARKINGS
-60
-70
-90
-120
-150
• Package
Ceramic Quad Flat pack
Ceramic Quad Flat pack
Q
No. 703
Q1
GENERAL DESCRIPTION
The AS8F128K32 is a 4 Megabit CMOS FLASH Memory
Module organized as 128K x 32 bits. The AS8F128K32 achieves
high speed access (60 to 150 ns), low power consumption and high
reliability by employing advanced CMOS memory technology.
The device is designed to be programmed in-system with the stan-
dard system 5.0V V_CC supply. A 12.0V V_PP is not required for program
or erase operation. The device can also be programmed or erased in
standard EPROM programmers. To eliminate bus
contention
the device has seperate chip enbaled (CEx\), write enable (WEx\) and
output enable (OE) controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated voltages
are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC
single-power-supply Flash standard. Commands are written to the com-
mand register using standard microprocessor write timings. Register
contents serve as input to an internal state machine that controls the
PIN ASSIGNMENT
(Top View)
68 Lead CQFP (Q & Q1)
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations.
Reading data out of the device is similar to reading from other Flash
or EPROM devices.
Device programming occurs by executing the program command
sequence. This invokes the Embedded Program algorithm—an inter-
nal algorithm that automatically times the program pulse widths and
verifies proper cell margin.
Device erasure occurs by executing the erase command sequence.
This invokes the Embedded Erase algorithm—an internal algorithm
that automatically preprograms the array (if it is not already pro-
grammed) before executing the erase operation. During erase, the
device automatically times the erase pulse widths and verifies proper
cell margin.
The host system can detect whether a program or erase operation
is complete by reading the I/O7 (Data\ Polling) and I/O6 (toggle) status
bits. After a program or erase cycle has been completed, the device is
ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased
and reprogrammed without affecting the data contents of other sectors.
The device is erased when shipped from the factory.
The hardware data protection measures include a low V_CC
detector automatically inhibits write operations during power
transitions. The hardware sector protection feature disables both
program and erase operations in any combination of the sectors of
memory, and is implemented using standard EPROM programmers.
The system can place the device into the standby mode. Power
consumption is greatly reduced in this mode.
The device electrically erases all bits within a sector simultane-
ously via Fowler-Nordheim tunneling. The bytes are programmed
one byte at a time using the EPROM programming mechanism of
hot electron injection.
For more products and information
please visit our web site at
www.micross.com
AS8F128K32
Rev. 2.8 01/10
Micross Components reserves the right to change products or specifications without notice.
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