AS58LC1001 Datasheet, PDF (1/19 Pages) Austin Semiconductor – 128K x 8 EEPROM Radiation Tolerant

EEPROM
AS58LC1001
128K x 8 EEPROM
Radiation Tolerant
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
z MIL-PRF-38535
FEATURES
z High speed: 250ns and 300ns
z Data Retention: 10 Years
z Low power dissipation, active current (20mW/MHz
(TYP)), standby current (100μW(MAX))
z Single +3.3V +.3V power supply
z Data Polling and Ready/Busy Signals
z Erase/Write Endurance (10,000 cycles in a page mode)
z Software Data protection Algorithm
z Data Protection Circuitry during power on/off
z Hardware Data Protection with RES pin
z Automatic Programming:
Automatic Page Write: 15ms (MAX)
128 Byte page size
OPTIONS
MARKINGS
z Timing
250ns access
-25
300ns access
-30
z Packages
Ceramic Flat Pack
F No. 306
Radiation Shielded Ceramic FP* SF No. 305
Ceramic SOJ
DCJ No. 508
z Operating Temperature Ranges
-Military (-55^oC to +125^oC)
XT
-Industrial (-40^oC to +85^oC)
IT
-Full Military Processing (-55^oC to +125^oC) 883C
*NOTE: Package lid is connected to ground (Vss). 2-sided shielding
provided via a Tungsten lid and a Tungsten slug on the underside of
package. 6.5X typ. TID boost due to shielding. (Geostationary orbit) Proven
typ. total dose 40K to 100K RADS. Contact factory for more information.
Micross can perform TID lot testing.
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)
RDY/BUSY\ 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O 0 13
I/O 1 14
I/O 2 15
Vss 16
32 Vcc
31 A15
30 RES\
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 I/O 7
20 I/O 6
19 I/O 5
18 I/O 4
17 I/O 3
GENERAL DESCRIPTION
The AS58LC1001 is a 1 Megabit CMOS Electrically Erasable
Programmable Read Only Memory (EEPROM) organized as 131, 072
x 8 bits. The AS58LC1001 is capable or in system electrical Byte and
Page reprogrammability.
The AS58LC1001 achieves high speed access, low power consump-
tion, and a high level of reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology and
CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make
its erase and write operations faster. The AS58LC1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection. Hard-
ware data protection is provided with the RES pin, in addition to noise
protection on the WE signal and write inhibit during power on and
off. Software data protection is implemented using JEDEC Optional
Standard algorithm.
The AS58LC1001 is designed for high reliability in the most
demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles
in the Page Mode.
AS58LC1001
Rev. 1.8 11/10
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
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