AS28C010 Datasheet, PDF (1/15 Pages) Austin Semiconductor – 128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

EEPROM
AS28C010
128K x 8 EEPROM
EEPROM Memory
5 Volt, Byte Alterable
AVAILABLE AS MILITARY
SPECIFICATIONS
 SMD 5962-38267
 MIL-STD-883
FEATURES
 Access speed: 120, 150, 200, and 250ns
 Data Retention: 100 Years
 Low power, active current: 50mA, standby current: 500uA
 Single +5V (+10%) power supply
 Data Polling and Toggle Bit
 Erase/Write Endurance (10,000 byte mode / 100,000 page
mode)
 Software Data protection Algorithm
 Data Protection Circuitry during power on/off
 Hardware Data Protection
 Automatic , Self-Timed Byte Write
 Automatic Programming:
 Automatic Page Write: 10ms (MAX)
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F), 32-Pin CerDIP (CW)
NC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O 0 13
I/O 1 14
I/O 2 15
Vss 16
32 Vcc
31 WE\
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 I/O 7
20 I/O 6
19 I/O 5
18 I/O 4
17 I/O 3
OPTIONS
MARKINGS
 Timing
120ns access
-12
150ns access
-15
200ns access
-20
250ns access
-25
 Packages
Ceramic Flat Pack
F
CerDIP, 600 mil
CW
 Operating Temperature Ranges
-Military (-55^oC to +125^oC)
XT
-Industrial (-40^oC to +85^oC)
IT
-Full Military Processing
Q
*NOTE: Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The AS28C010 is a 1 Megabit CMOS Electrically Erasable Pro-
grammable Read Only Memory (EEPROM) organized as 131, 072
x 8 bits. The AS28C010 is capable of in system electrical Byte and
Page reprogrammability.
The AS28C010 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
CMOS process and circuitry technology.
This device has a 256-Byte Page Programming function to make
its erase and write operations faster. The AS28C010 features Data
Polling and Toggle Bit to indicate completion of erase and program-
ming operations.
This EEPROM provides several levels of data protection. Hard-
ware data protection is provided , in addition to noise protection on
the WE signal and write inhibit during power on and off. Software
data protection is implemented using JEDEC Optional Standard
algorithm.
The AS28C010 is designed for high reliability in the most
demanding applications. Data retention is specified for 100 years and
erase/write endurance is guaranteed to a minimum of 100,000 cycles
in the Page Mode and 10,000 cycles in the Byte Mode.
For more products and information
please visit our web site at
www.micross.com
AS28C010
Rev. 1.7 01/12
Micross Components reserves the right to change products or specifications without notice.
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