3N191_TO-78 Datasheet, PDF (1/1 Pages) Micross Components – a monolithic dual enhancement mode P-Channel Mosfet

3N191
P-CHANNEL MOSFET
The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet
The 3N191 is a dual enhancement mode P-Channel
Mosfet and is ideal for space constrained applications
and those requiring tight electrical matching.
The hermetically sealed TO-78 package is well suited
for high reliability and harsh environment applications.
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N191
LOW GATE LEAKAGE CURRENT
I_GSS ≤ ± 10pA
LOW TRANSFER CAPACITANCE
C_rss ≤ 1.0pF
ABSOLUTE MAXIMUM RATINGS¹@ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
‐65°C to +150°C
‐55°C to +135°C
Maximum Power Dissipation
3N191 Features:
Continuous Power Dissipation (one side)
Continuous Power Dissipation (one side)
300mW
525mW
ƒ Very high Input Impedance
ƒ High Gate Breakdown Voltage
ƒ Low Capacitance
MAXIMUM CURRENT
Drain to Source²
MAXIMUM VOLTAGES
Drain to Gate or Drain to Source²
Transient Gate to Source^2,3
50mA
‐30V
±125V
Gate‐Gate Voltage
±80V
3N191 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BV_DSS
Drain to Source Breakdown Voltage ‐40
BV_SDS
Source to Drain Breakdown Voltage ‐40
V_GS
Gate to Source Voltage
‐3.0
V_GS(th)
Gate to Source Threshold Voltage ‐2.0
‐2.0
I_GSSR
Gate Reverse Leakage Current
‐‐
I_GSSF
Forward Gate Leakage Current
‐‐
I_DSS
Drain to Source Leakage Current
‐‐
Click ^ISDS
I_D(on)
r_DS(on)
g_fs
Y_os
Source to Drain Leakage Current
Drain Current “On”
Drain to Source “On” Resistance
Forward Transconductance⁴
Output Admittance
‐‐
‐5.0
‐‐
1500
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐6.5
‐‐
‐5.0
‐‐
‐5.0
‐‐
10
‐‐
‐10
‐‐
‐200
To ^‐‐
‐400
‐‐
‐30
‐‐
300
‐‐
4000
‐‐
300
I_D = ‐10µA
I_S = ‐10µA, V_BD = 0V
V
V_DS = ‐15V, I_D = ‐500µA
V_DS = ‐15V, I_D = ‐500µA
V_DS = V_GS , I_D = ‐10µA
V_GS = 40V
V_GS = ‐40V
pA
V_DS = ‐15V
Buy^{VSD=‐15V VDB=0}
mA
V_DS = ‐15V, V_GS = ‐10V
Ω
V_DS = ‐20V, I_D = ‐100µA
µS
V_DS = ‐15V, I_D = ‐5mA , f = 1kHz
C_iss
Input Capacitance
‐‐
‐‐
4.5
C_rss
Reverse Transfer Capacitance
‐‐
‐‐
1.0
pF
V_DS = ‐15V, I_D = ‐5mA , f = 1MHz
C_oss
Output Capacitance
‐‐
‐‐
3.0
MATCHING CHARACTERISTICS 3N191
SYMBOL
CHARACTERISTIC
LIMITS
MIN
MAX
UNITS
CONDITIONS
g_fs1/g_fs2
Forward Transconductance Ratio
0.85
1.0
ns
V_GS1‐2
Gate Source Threshold Voltage
Differential⁵
‐‐
100
mV
V_DS = ‐15V, I_D = ‐500µA , f = kHz
V_DS = ‐15V, I_D = ‐500µA
∆V_GS1‐2/∆T
Gate Source Threshold Voltage
Differential Change with Temperature⁵
‐‐
100
µV/°C
V_DS = ‐15V, I_D = ‐500µA, T_S = ‐55°C to +25°C
V_DS = ‐15V, I_D = ‐500µA, T_S = +25°C to +125°C
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
t_d(on)
Turn On Delay Time
‐‐
‐‐
15
t_r
Turn On Rise Time
‐‐
‐‐
30
ns
t_off
Turn Off Time
‐‐
‐‐
50
V_DD = ‐15V, I_D(on) = ‐5mA, R_G = R_L = 1.4KΩ
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N191 serviceability may be impaired.
Note 2 – Per Transistor
Note 3 – Approximately doubles for every 10°C in T_A
Note 4 – Measured at end points, T_A and T_B
Note 5 – Pulse: t= 300µS, Duty Cycle ≤ 3%
Device Schematic
TO-78 (Bottom View)
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Available Packages:
3N191 in TO-72
3N191 in bare die.
Please contact Micross for full
package and die dimensions
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