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3N191 Datasheet, PDF (1/1 Pages) Micross Components – a monolithic dual enhancement mode P-Channel Mosfet | |||
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3N191
P-CHANNEL MOSFET
The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet
The 3N191 is a dual enhancement mode P-Channel
Mosfet and is ideal for space constrained applications
and those requiring tight electrical matching.
The hermetically sealed TO-78 package is well suited
for high reliability and harsh environment applications.
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N191
LOW GATE LEAKAGE CURRENT
IGSS ⤠± 10pA
LOW TRANSFER CAPACITANCE
Crss ⤠1.0pF
ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
â65°C to +150°C
â55°C to +135°C
Maximum Power Dissipation
3N191 Features:
Continuous Power Dissipation (one side)
Continuous Power Dissipation (one side)
300mW
525mW
 Very high Input Impedance
 High Gate Breakdown Voltage
 Low Capacitance
MAXIMUM CURRENT
Drain to Source2
MAXIMUM VOLTAGES
Drain to Gate or Drain to Source2
Transient Gate to Source2,3
50mA
â30V
±125V
GateâGate Voltage
±80V
3N191 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BVDSS
Drain to Source Breakdown Voltage â40
BVSDS
Source to Drain Breakdown Voltage â40
VGS
Gate to Source Voltage
â3.0
VGS(th)
Gate to Source Threshold Voltage â2.0
â2.0
IGSSR
Gate Reverse Leakage Current
ââ
IGSSF
Forward Gate Leakage Current
ââ
IDSS
Drain to Source Leakage Current
ââ
Click ISDS
ID(on)
rDS(on)
gfs
Yos
Source to Drain Leakage Current
Drain Current âOnâ
Drain to Source âOnâ Resistance
Forward Transconductance4
Output Admittance
ââ
â5.0
ââ
1500
ââ
ââ
ââ
ââ
ââ
ââ
â6.5
ââ
â5.0
ââ
â5.0
ââ
10
ââ
â10
ââ
â200
To ââ
â400
ââ
â30
ââ
300
ââ
4000
ââ
300
ID = â10µA
IS = â10µA, VBD = 0V
V
VDS = â15V, ID = â500µA
VDS = â15V, ID = â500µA
VDS = VGS , ID = â10µA
VGS = 40V
VGS = â40V
pA
VDS = â15V
BuyVSD=â15V VDB=0
mA
VDS = â15V, VGS = â10V
Ω
VDS = â20V, ID = â100µA
µS
VDS = â15V, ID = â5mA , f = 1kHz
Ciss
Input Capacitance
ââ
ââ
4.5
Crss
Reverse Transfer Capacitance
ââ
ââ
1.0
pF
VDS = â15V, ID = â5mA , f = 1MHz
Coss
Output Capacitance
ââ
ââ
3.0
MATCHING CHARACTERISTICS 3N191
SYMBOL
CHARACTERISTIC
LIMITS
MIN
MAX
UNITS
CONDITIONS
gfs1/gfs2
Forward Transconductance Ratio
0.85
1.0
ns
VGS1â2
Gate Source Threshold Voltage
Differential5
ââ
100
mV
VDS = â15V, ID = â500µA , f = kHz
VDS = â15V, ID = â500µA
âVGS1â2/âT
Gate Source Threshold Voltage
Differential Change with Temperature5
ââ
100
µV/°C
VDS = â15V, ID = â500µA, TS = â55°C to +25°C
VDS = â15V, ID = â500µA, TS = +25°C to +125°C
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
td(on)
Turn On Delay Time
ââ
ââ
15
tr
Turn On Rise Time
ââ
ââ
30
ns
toff
Turn Off Time
ââ
ââ
50
VDD = â15V, ID(on) = â5mA, RG = RL = 1.4KΩ
Note 1 â Absolute maximum ratings are limiting values above which 3N191 serviceability may be impaired.
Note 2 â Per Transistor
Note 3 â Approximately doubles for every 10°C in TA
Note 4 â Measured at end points, TA and TB
Note 5 â Pulse: t= 300µS, Duty Cycle ⤠3%
Device Schematic
TO-78 (Bottom View)
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Available Packages:
3N191 in TO-72
3N191 in bare die.
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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