3N171_TO-72 Datasheet, PDF (1/1 Pages) Micross Components – an enhancement mode N-Channel Mosfet

3N171
N-CHANNEL MOSFET
The 3N171 is an enhancement mode N-Channel Mosfet
The 3N171 is an enhancement mode N-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
3N171 Features:
ƒ Low ON Resistance
ƒ Low Capacitance
ƒ High Gain
ƒ High Gate Breakdown Voltage
ƒ Low Threshold Voltage
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS (Note 1)
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Drain to Source
MAXIMUM VOLTAGES
Drain to Gate
Drain to Source
Peak Gate to Source
r_DS(on) ≤ 200Ω
t_d(on) ≤ 3.0ns
‐65°C to +150°C
‐55°C to +135°C
300mW
30mA
±35V
25V
±35V
3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BV_DSS
Drain to Source Breakdown Voltage 25
‐‐
‐‐
V_DS(on)
Drain to Source “On” Voltage
‐‐
‐‐
2.0
V
I_D = 10µA, V_GS = 0V
I_D = 10mA, V_GS = 10V
V_GS(th)
Gate to Source Threshold Voltage 1.5
‐‐
2.0
V_DS = 10V, I_D = 10µA
I_GSS
Gate Leakage Current
‐‐
‐‐
10
pA
V_GS = ‐35V, V_DS = 0V
I_DSS
Drain Leakage Current “Off”
‐‐
‐‐
10
nA
V_GS = 10V, V_DS = 10V
Click ^ID(on)
g_fs
r_DS(on)
C_rss
C_iss
Drain Current “On”
Forward Transconductance
Drain to Source “On” Resistance
Reverse Transfer Capacitance
Input Capacitance
10
1000
‐‐
‐‐
‐‐
To ^‐‐
‐‐
‐‐
‐‐
‐‐
200
‐‐
1.3
‐‐
5
Buy ^mA
V_GS = 10V, V_DS = 10V
µS
V_DS = 10V, I_D = 2mA , f = 1kHz
Ω
V_GS = 10V, I_D = 0A, f = 1kHz
V_DS = 0V, V_GS = 0V , f = 1MHz
pF
V_DS = 10V, V_GS = 0V , f = 1MHz
C_db
Drain to Body Capacitance
‐‐
‐‐
5.0
V_DB = 10V, f = 1MHz
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
t_d(on)
Turn On Delay Time
t_r
Turn On Rise Time
t_d(off)
Turn Off Delay Time
t_f
Turn Off Fall Time
MAX UNITS
3
10
ns
3
15
CONDITIONS
V_DD = 10V, I_D(on) = 10mA, V_GS(on) = 10V, V_GS(off) = 0V, R_G = 50Ω
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N171 serviceability may be impaired.
Micross Components Europe
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Available Packages:
3N171 in TO-72
3N171 in bare die.
Please contact Micross for full
package and die dimensions
TO-72 (Bottom View)
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Email: [e-mail] Web: www.micross.com/distribution.aspx