3N164 Datasheet, PDF (1/1 Pages) Micross Components – an enhancement mode P-Channel Mosfet

3N164
P-CHANNEL MOSFET
The 3N164 is an enhancement mode P-Channel Mosfet
The 3N164 is an enhancement mode P-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N164
ABSOLUTE MAXIMUM RATINGS¹
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
(See Packaging Information).
Operating Junction Temperature
‐55°C to +150°C
Maximum Power Dissipation
3N164 Features:
ƒ Very high Input Impedance
ƒ Low Capacitance
ƒ High Gain
ƒ High Gate Breakdown Voltage
ƒ Low Threshold Voltage
Continuous Power Dissipation
MAXIMUM CURRENT
Drain Current
MAXIMUM VOLTAGES
Drain to Gate
Drain to Source
Peak Gate to Source²
375mW
50mA
‐30V
‐30V
±125V
3N164 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
I_GSSF
Gate Forward Current
‐10
‐‐
‐‐
pA
V_GS = ‐30V, V_DS = 0V
T_A= +125°C
‐‐
‐‐
‐25
BV_DSS
Drain to Source Breakdown Voltage ‐30
‐‐
‐‐
I_D = ‐10µA, V_GS = 0V
BV_SDS
Source‐Drain Breakdown Voltage ‐30
‐‐
‐‐
V_GS(th)
Gate to Source Threshold Voltage ‐2.0
‐‐
‐5.0
V
‐2.0
‐‐
‐5.0
I_S = ‐10µA, V_GD = 0V, V_BD = 0V
V_DS = V_GS , I_D = ‐10µA
V_DS = ‐15V, I_D = ‐10µA
V_GS
Gate Source Voltage
‐3.0
‐‐
‐6.5
V_DS = ‐15V, I_D = ‐0.5mA
I_DSS
Drain Leakage Current “Off”
‐‐
‐‐
200
pA
V_DS = ‐15V, V_GS = 0V
I_SDS
Source Drain Current
‐‐
Click ^rDS(on)
I_D(on)
g_fs
g_os
C_iss
Drain to Source “On” Resistance
Drain Current “On”
Forward Transconductance
Output Admittance
Input Capacitance–Output shorted
‐‐
‐5.0
2000
‐‐
‐‐
C_rss
Reverse Transfer Capacitance
‐‐
‐‐
400
To ^‐‐
250
‐‐
‐30
‐‐
4000
‐‐
250
‐‐
2.5
‐‐
0.7
V_DS = 15V, V_GS = V_DB = 0V
Buy ^Ω
V_GS = ‐20V, I_D = ‐100µA
mA
V_DS = ‐15V, V_GS = ‐10V
µS
V_DS = ‐15V, I_D = ‐10mA , f = 1kHz
pF
V_DS = ‐15V, I_D = ‐10mA , f = 1MHz³
C_oss
Output Capacitance–Input Shorted ‐‐
‐‐
3.0
SWITCHING CHARACTERISTICS ‐ T_A = 25°C and V_BS = 0 unless otherwise noted
TIMING WAVEFORMS
SYMBOL
CHARACTERISTIC
MAX UNITS CONDITIONS
t_d(on)
Turn On Delay Time
12
V_DD = ‐15V
t_r
t_off
Turn On Rise Time
Turn Off Time
24
ns
I_D(on) = ‐10mA
50
R_G = R_L = 1.4KΩ³
SWITCHING TEST CIRCUIT
Micross Components Europe
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N164 serviceability may be impaired.
Note 2 – Device must not be tested at ±125V more than once or longer than 300ms.
Note 3 – For design reference only, not 100% tested
Available Packages:
TO-72 (Bottom View)
3N164 in TO-72
3N164 in bare die.
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Email: [e-mail] Web: www.micross.com/distribution.aspx