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2N5912C Datasheet, PDF (1/1 Pages) Micross Components – Linear Systems replaces discontinued Siliconix & National | |||
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2N5912C
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912C
The 2N5912C are monolithic dual JFETS. The
monolithic dual chip design reduces parasitics and
gives better performance at very high frequencies while
ensuring extremely tight matching. These devices are
an excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The 2N5912C is a direct replacement for
discontinued Siliconix and National 2N5912C.
The hermetically sealed TO-71 is well suited for military
applications.
(See Packaging Information).
2N5912C Applications:
 Wideband Differential Amps
 High-Speed,Temp-Compensated Single-
Ended Input Amps
 High-Speed Comparators
 Impedance Converters and vibrations
detectors.
FEATURES
Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C
LOW NOISE (10KHz)
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS 1
en~ 4nV/âHz
gfs ⥠4000µS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
â65°C to +150°C
â55°C to +135°C
500mW
50mA
â25V
â25V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP
|VGS1 â VGS2 |
Differential Gate to Source Cutoff Voltage
ââ
ââ
â|VGS1 â VGS2 | / âT
Differential Gate to Source Cutoff
Voltage Change with Temperature
ââ
ââ
Click IDSS1 / IDSS2
|IG1 â IG2 |
gfs1 / gfs2
Gate to Source Saturation Current Ratio
Differential Gate Current
Forward Transconductance Ratio2
To0.95
ââ
ââ
ââ
0.95
ââ
MAX UNITS CONDITIONS
40
mV VDG = 10V, ID = 5mA
40
µV/°C VDG = 10V, ID = 5mA
TA = â55°C to +125°C
Buy 1
%
VDS = 10V, VGS = 0V
20
nA
VDG = 10V, ID = 5mA
TA = +125°C
1
%
VDS = 10V, ID = 5mA, f = 1kHz
CMRR
Common Mode Rejection Ratio
ââ
85
ââ
dB
VDG = 5V to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Gate to Source Breakdown Voltage
â25
VGS(off)
Gate to Source Cutoff Voltage
â1
VGS(F)
VGS
IDSS
IGSS
Gate to Source Forward Voltage
ââ
Gate to Source Voltage
â0.3
Gate to Source Saturation Current3
7
Gate Leakage Current3
ââ
IG
Gate Operating Current
ââ
TYP.
MAX. UNITS
ââ
ââ
â5
V
0.7
ââ
ââ
â4
ââ
40
mA
â1
â50
â1
â50
pA
CONDITIONS
IG = â1µA, VDS = 0V
VDS = 10V, ID = 1nA
IG = 1mA, VDS = 0V
VDG = 10V, IG = 5mA
VDS = 10V, VGS = 0V
VGS = â15V, VDS = 0V
VDG = 10V, ID = 5mA
gfs
Forward Transconductance
4000
ââ
10000
4000
ââ
10000
µS
VDG = 10V, ID= 5mA
gos
Output Conductance
ââ
ââ
100
ââ
ââ
150
CISS
Input Capacitance
ââ
ââ
5
pF
VDG = 10V, ID = 5mA, f = 1MHz
CRSS
Reverse Transfer Capacitance
ââ
ââ
1.2
NF
Noise Figure
ââ
ââ
1
dB
VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ
en
Equivalent Input Noise Voltage
ââ
7
20
nV/âHz
VDG = 10V, ID = 5mA, f = 100Hz
ââ
4
10
VDG = 10V, ID = 5mA, f = 10kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ⤠300µs Duty Cycle ⤠3%
3. Assumes smaller value in numerator
Available Packages:
TO-71 (Top View)
Please contact Micross for full package and die dimensions:
2N5912C in TO-71
2N5912C available as bare die
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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