2N5911_TO-71 Datasheet, PDF (1/1 Pages) Micross Components – MONOLITHIC DUAL N-CHANNEL JFET

2N5911
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5911
The 2N5911 are monolithic dual JFETs. The monolithic
dual chip design reduces parasitics and gives better
performance at very high frequencies while ensuring
extremely tight matching. These devices are an
excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The 2N5911 is a direct replacement for
discontinued Siliconix and National 2N5911.
The hermetically sealed TO-71 is well suited for military
and harsh environment applications.
(See Packaging Information).
2N5911 Applications:
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
FEATURES
Improved Direct Replacement for SILICONIX & NATIONAL 2N5911
LOW NOISE (10KHz)
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS ¹
e_n~ 4nV/√Hz
g_fs ≥ 4000µS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
‐65°C to +150°C
‐55°C to +135°C
500mW
50mA
‐25V
‐25V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP
|V_GS1 – V_GS2 |
Differential Gate to Source Cutoff Voltage
‐‐
‐‐
∆|V_GS1 – V_GS2 | / ∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
‐‐
‐‐
Click ^{IDSS1 / IDSS2}
|I_G1 – I_G2 |
g_fs1 / g_fs2
Gate to Source Saturation Current Ratio
Differential Gate Current
Forward Transconductance Ratio²
To^0.95
‐‐
‐‐
‐‐
0.95
‐‐
MAX UNITS CONDITIONS
10
mV V_DG = 10V, I_D = 5mA
20
µV/°C V_DG = 10V, I_D = 5mA
T_A = ‐55°C to +125°C
Buy ¹
%
V_DS = 10V, V_GS = 0V
20
nA
V_DG = 10V, I_D = 5mA
T_A = +125°C
1
%
V_DS = 10V, I_D = 5mA, f = 1kHz
CMRR
Common Mode Rejection Ratio
‐‐
85
‐‐
dB
V_DG = 5V to 10V, I_D = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV_GSS
Gate to Source Breakdown Voltage
‐25
V_GS(off)
Gate to Source Cutoff Voltage
‐1
V_GS(F)
V_GS
I_DSS
I_GSS
Gate to Source Forward Voltage
‐‐
Gate to Source Voltage
‐0.3
Gate to Source Saturation Current³
7
Gate Leakage Current³
‐‐
I_G
Gate Operating Current
‐‐
TYP.
MAX. UNITS
‐‐
‐‐
‐5
V
0.7
‐‐
‐‐
‐4
‐‐
40
mA
‐1
‐50
‐1
‐50
pA
CONDITIONS
I_G = ‐1µA, V_DS = 0V
V_DS = 10V, I_D = 1nA
I_G = 1mA, V_DS = 0V
V_DG = 10V, I_G = 5mA
V_DS = 10V, V_GS = 0V
V_GS = ‐15V, V_DS = 0V
V_DG = 10V, I_D = 5mA
g_fs
Forward Transconductance
4000
‐‐
10000
4000
‐‐
10000
µS
V_DG = 10V, I_D= 5mA
g_os
Output Conductance
‐‐
‐‐
100
‐‐
‐‐
150
C_ISS
Input Capacitance
‐‐
‐‐
5
pF
V_DG = 10V, I_D = 5mA, f = 1MHz
C_RSS
Reverse Transfer Capacitance
‐‐
‐‐
1.2
NF
Noise Figure
‐‐
‐‐
1
dB
V_DG = 10V, I_D = 5mA, f = 10kHz, R_G = 100KΩ
e_n
Equivalent Input Noise Voltage
‐‐
7
20
nV/√Hz
V_DG = 10V, I_D = 5mA, f = 100Hz
‐‐
4
10
V_DG = 10V, I_D = 5mA, f = 10kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
Available Packages:
TO-71 (Top View)
Please contact Micross for full package and die dimensions:
2N5911 in TO-71
2N5911 available as bare die
Email: [e-mail]
Web: www.micross.com/distribution.aspx
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