2N5907 Datasheet, PDF (1/1 Pages) Micross Components – LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

2N5907
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
The 2N5907 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
| V_GS1‐2 / T| = 5µV/°C TYP.
I_G = 150fA TYP.
wide range of precision instrumentation applications
where tight tracking is required.
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
V_p = 2V TYP.
The hermetically sealed TO-78 package is well suited
for hi-reliability and harsh environment applications.
@ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
‐65°C to +150°C
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐V_GSS
Gate Voltage to Drain or Source
40V
‐V_DSO
Drain to Source Voltage
40V
‐I_G(f)
Gate Forward Current
10mA
2N5907 Benefits:
ƒ Tight Tracking
ƒ Good matching
ƒ Ultra Low Leakage
ƒ Low Drift
‐I_G
Gate Reverse Current
Maximum Power Dissipation
10µA
Device Dissipation @ Free Air – Total
40mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V_GS1‐2 / T| max.
DRIFT VS.
TEMPERATURE
10 µV/°C V_DG=10V, I_D=30µA
T_A=‐55°C to +125°C
| V _GS1‐2 | max.
OFFSET VOLTAGE
5
mV V_DG=10V, I_D=30µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX.
UNITS
CONDITIONS
BV_GSS
Breakdown Voltage
40
60
‐‐
V
V_DS = 0
I_D=1nA
BV_GGO
Gate‐To‐Gate Breakdown
40
‐‐
‐‐
V
I_G= 1nA
I_D= 0
I_S= 0
TRANSCONDUCTANCE
Y_fSS
Full Conduction
70
Click ^YfS
Typical Operation
50
|Y_FS1‐2 / Y _FS|
Mismatch
‐‐
DRAIN CURRENT
I_DSS
Full Conduction
60
|I_DSS1‐2 / I_DSS| Mismatch at Full Conduction
‐‐
300
500
µmho
V_DG= 10V V_GS= 0V f = 1kHz
To Buy ¹⁰⁰
200
1
5
400
1000
2
5
µmho
%
µA
%
V_DG= 10V I_D= 30µA f = 1kHz
V_DG= 10V
V_GS= 0V
GATE VOLTAGE
V_GS(off) or V_p
Pinchoff voltage
0.6
2
4.5
V
V_DS= 10V
I_D= 1nA
V_GS(on)
Operating Range
‐‐
‐‐
4
V
V_DS=10V
I_D=30µA
GATE CURRENT
‐I_Gmax.
Operating
‐‐
‐‐
1
pA
V_DG= 10V I_D= 30µA
‐I_Gmax.
‐I_GSSmax.
‐I_GSSmax.
High Temperature
At Full Conduction
High Temperature
‐‐
‐‐
1
‐‐
‐‐
2
‐‐
‐‐
5
nA
T_A= +125°C
pA
V_DS =0V V_GS= 20V
nA
T_A= +125°C
I_GGO
Gate‐to‐Gate Leakage
‐‐
1
‐‐
pA
V_GG= 20V
OUTPUT CONDUCTANCE
Y_OSS
Full Conduction
‐‐
‐‐
5
Y_OS
Operating
‐‐
0.1
0.1
µmho
V_DG= 10V
V_DG= 10V
V_GS= 0V
I_D=30µA
|Y_OS1‐2|
Differential
‐‐
0.01
0.1
COMMON MODE REJECTION
CMR
‐20 log |∆V_GS1‐2/∆V_DS|
‐‐
90
‐‐
dB
∆V_DS = 10 to 20V I_D=30µA
CMR
‐20 log |∆V_GS1‐2/∆V_DS|
‐‐
90
‐‐
∆V_DS = 5 to 10V I_D=30µA
NOISE
V_DS= 10V V_GS= 0V R_G= 10MΩ
NF
Figure
‐‐
‐‐
1
dB
f= 100Hz NBW= 6Hz
e_n
Voltage
‐‐
20
70
nV/√Hz
V_DG=10V I_D=30µA f=10Hz NBW=1Hz
CAPACITANCE
C_ISS
Input
‐‐
‐‐
3
V_DS= 10V V_GS= 0V f= 1MHz
C_RSS
Reverse Transfer
‐‐
‐‐
1.5
pF
C_DD
Drain‐to‐Drain
‐‐
‐‐
0.1
V_DG = 20V I_D=30µA
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-78 (Bottom View)
Micross Components Europe
Available Packages:
2N5907 in TO-78
2N5907 available as bare die
Please contact Micross for full package and die dimensions
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.