2N5564 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Matched N-Channel JFET Pairs

2N5564
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5564
The 2N5564 are monolithic dual JFETS. The monolithic
dual chip design reduces parasitics and gives better
performance at very high frequencies while ensuring
extremely tight matching. These devices are an
excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The 2N5564 is a direct replacement for
discontinued Siliconix and National 2N5564.
The hermetically sealed TO-71 is well suited for military
and harsh environment applications.
(See Packaging Information).
2N5564 Applications:
ƒ Wideband Differential Amps
ƒ High-Speed,Temp-Compensated Single-
Ended Input Amps
ƒ High-Speed Comparators
ƒ Impedance Converters and vibrations
detectors.
FEATURES
Improved Direct Replacement for SILICONIX & NATIONAL 2N5564
HIGH GAIN
7500µmho MINIMUM
LOW “ON” RESISTANCE
ABSOLUTE MAXIMUM RATINGS ¹
100Ω MAXIMUM
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation (Each transistor)
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
‐65°C to +200°C
‐55°C to +125°C
325mW
650mW
50mA
‐40V
‐40V
±80V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V_GS1 – V_GS2 |
Differential Gate to Source Cutoff Voltage
∆|V_GS1 – V_GS2 | / ∆T Differential Gate to Source Cutoff
I_DSS1 / I_DSS2
|I_G1 – I_G2 |
Click Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Differential Gate Current
g_fs1 / g_fs2
Forward Transconductance Ratio²
MIN TYP MAX UNITS CONDITIONS
‐‐
‐‐
5
mV V_DG = 15V, I_D = 2mA
‐‐
‐‐
10
µV/°C V_DG = 15V, I_D = 2mA
To Buy ^0.95
‐‐
1
T_A = ‐55°C to +125°C
%
V_DS = 10V, V_GS = 0V
‐‐
‐‐
20
nA
V_DG = 10V, I_D = 5mA
T_A = +125°C
0.95
‐‐
1
%
V_DS = 15V, I_D = 2mA, f = 1kHz
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
BV_GSS
Gate to Source Breakdown Voltage
‐40
‐‐
V_GS(off)
Gate to Source Cutoff Voltage
‐0.5
‐‐
‐3
V
I_G = ‐1µA, V_DS = 0V
V_DS = 15V, I_D = 1nA
V_GS(F)
Gate to Source Forward Voltage
‐‐
I_DSS
Gate to Source Saturation Current³
5
I_GSS
Gate Leakage Current³
‐‐
‐‐
1
‐‐
30
mA
‐‐
‐200
nA
I_G = 2mA, V_DS = 0V
V_DS = 15V, V_GS = 0V
V_GS = ‐20V, V_DS = 0V, 150°C
g_fs
Forward Transconductance
7500
‐‐
12500
V_DG = 15V, I_D= 2mA, f = 1kHz
7000
‐‐
‐‐
µS
V_DG = 15V, I_D= 2mA, f = 100MHz
g_os
Output Conductance
‐‐
‐‐
45
V_DG = 15V, I_D= 2mA, f = 1kHz
C_ISS
Input Capacitance
‐‐
‐‐
5
pF
V_DG = 15V, I_D= 2mA, f = 100MHz
C_RSS
Reverse Transfer Capacitance
‐‐
‐‐
12
NF
Noise Figure
‐‐
‐‐
1
dB
V_DG = 15V, I_D = 2mA, f = 10Hz, R_G = 1MΩ
_
Equivalent Input Noise Voltage
‐‐
‐‐
50
nV/√Hz
V_DG = 15V, I_D = 2mA, f = 10Hz
e_n
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
TO-71 (Top View)
Available Packages:
Please contact Micross for full package and die dimensions:
2N5564 in TO-71
2N5564 available as bare die
Email: [e-mail]
Web: www.micross.com/distribution.aspx
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