2N5116_TO-18 Datasheet, PDF (1/1 Pages) Micross Components – P-CHANNEL JFET

2N5116
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5116
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5116
LOW ON RESISTANCE
LOW CAPACITANCE
r_DS(on) ≤ 150Ω
6pF
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
(See Packaging Information).
Maximum Temperatures
2N5116 Benefits:
ƒ Low On Resistance
ƒ I_D(off) ≤ 500 pA
ƒ Switches directly from TTL logic
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
‐55°C to +200°C
‐55°C to +200°C
500mW
2N5116 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
2N5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
I_G = ‐50mA
V_GDS = 30V
V_GSS = 30V
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX UNITS
CONDITIONS
BV_GSS
V_GS(off)
V_GS(F)
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
30
‐‐
‐‐
1
‐‐
4
‐‐
‐0.7
‐1
V
I_G = 1µA, V_DS = 0V
V_DS = ‐15V, I_D = ‐1nA
I_G = ‐1mA, V_DS = 0V
V_DS(on)
Drain to Source On Voltage
‐‐
‐1.0
‐‐
‐‐
‐0.7
‐‐
‐‐
‐0.5
‐0.6
V_GS = 0V, I_D = ‐15mA
V_GS = 0V, I_D = ‐7mA
V_GS = 0V, I_D = ‐3mA
I_DSS
Drain to Source Saturation Current (Note 2) ‐5
‐‐
‐25
mA
V_DS = ‐15V, V_GS = 0V
I_GSS
Gate Reverse Current
‐‐
5
500
Click ^IG
I_D(off)
r_DS(on)
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
To ^‐‐
‐5
‐‐
‐‐
‐10
‐‐
‐‐
‐10
‐‐
‐‐
‐10
‐500
‐‐
‐‐
150
2N5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
V_GS = 20V, V_DS = 0V
Buy^{VDS= ‐15V, ID= ‐1mA}
pA
V_DS = ‐15V, V_GS = 12V
V_DS = ‐15V, V_GS = 7V
V_DS = ‐15V, V_GS = 5V
Ω
I_D = ‐1mA, V_GS = 0V
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX UNITS
CONDITIONS
g_fs
Forward Transconductance
‐‐
4.5
‐‐
mS
V_DS = ‐15V, I_D = 1mA , f = 1kHz
g_os
Output Conductance
‐‐
20
‐‐
µS
r_DS(on)
Drain to Source On Resistance
‐‐
‐‐
150
Ω
I_D = 0A, V_GS = 0V, f = 1kHz
C_iss
Input Capacitance
‐‐
20
25
V_DS = ‐15V, V_GS = 0V, f = 1MHz
‐‐
5
‐‐
pF
V_DS = 0V, V_GS = 12V, f = 1MHz
C_rss
Reverse Transfer Capacitance
‐‐
6
‐‐
V_DS = 0V, V_GS = 7V, f = 1MHz
‐‐
6
7
V_DS = 0V, V_GS = 5V, f = 1MHz
e_n
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
V_DG = 10V, I_D = 10mA , f = 1kHz
2N5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
t_d(on)
Turn On Time
12
t_r
Turn On Rise Time
30
ns
t_d(off)
Turn Off Time
10
t_f
Turn Off Fall Time
50
V_GS(L) = ‐5V
V_GS(H) = 0V
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
2N5116 SWITCHING CIRCUIT PARAMETERS
V_DD
V_GG
R_L
R_G
I_D(on)
‐6V
8V
2kΩ
390Ω
‐3mA
Available Packages:
2N5116 in TO-18
2N5116 in bare die.
Please contact Micross for full
package and die dimensions
TO-18 (Bottom View)
SWITCHING TEST CIRCUIT
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