2N5019_TO-92 Datasheet, PDF (1/1 Pages) Micross Components – a single P-Channel JFET switch

2N5019
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5019
The 2N5019 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The TO-92 provides a low cost option and ease of
manufacturing.
(See Packaging Information).
2N5019 Benefits:
ƒ Low Insertion Loss
ƒ No offset or error voltage generated by closed
switch
ƒ Purely resistive
2N5019 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5019
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
r_DS(on) ≤ 150Ω
‐55°C to +200°C
‐55°C to +200°C
500mW
I_G = ‐50mA
V_GDS = 30V
V_GSS = 30V
2N5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
BV_GSS
Gate to Source Breakdown Voltage
30
‐‐
‐‐
V_GS(off)
V_DS(on)
Gate to Source Cutoff Voltage
Drain to Source On Voltage
‐‐
‐‐
5
‐‐
‐‐
‐0.5
I_DSS
Drain to Source Saturation Current (Note 2) ‐5
‐‐
‐‐
Click ^IGSS
I_D(off)
I_DGO
r_DS(on)
Gate Reverse Current
Drain Cutoff Current
Drain Reverse Current
Drain to Source On Resistance
To ^‐‐
‐‐
2
‐‐
‐‐
‐10
‐‐
‐‐
‐10
‐‐
‐‐
‐2
‐‐
‐‐
150
2N5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
r_DS(on)
C_iss
Drain to Source On Resistance
Input Capacitance
‐‐
‐‐
150
‐‐
‐‐
45
C_rss
Reverse Transfer Capacitance
‐‐
‐‐
10
2N5019 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
UNITS
CONDITIONS
I_G = 1µA, V_DS = 0V
V
V_DS = ‐15V, I_D = ‐1µA
V_GS = 0V, I_D = ‐3mA
mA
V_DS = ‐20V, V_GS = 0V
Buy ^nA
V_GS = 15V, V_DS = 0V
V_DS = ‐15V, V_GS = 12V
µA
V_DS = ‐15V, V_GS = 7V
nA
V_DG = ‐15V, I_S = 0A
Ω
I_D = ‐1mA, V_GS = 0V
UNITS
Ω
pF
CONDITIONS
I_D = 0A, V_GS = 0V, f = 1kHz
V_DS = ‐15V, V_GS = 0V, f = 1MHz
V_DS = 0V, V_GS = 7V, f = 1MHz
CONDITIONS
t_d(on)
Turn On Time
15
t_r
Turn On Rise Time
75
ns
t_d(off)
Turn Off Time
25
t_f
Turn Off Fall Time
100
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5019 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
V_GS(L) = 7V
V_GS(H) = 0V
See Switching Circuit
SWITCHING TEST CIRCUIT
2N5019 SWITCHING CIRCUIT PARAMETERS
V_DD
‐6V
V_GG
8V
R_L
1.8kΩ
R_G
390Ω
I_D(on)
‐3mA
Micross Components Europe
Available Packages:
2N5019 in TO-92
2N5019 in bare die.
Please contact Micross for full
package and die dimensions
TO-92 (Bottom View)
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Email: [e-mail] Web: www.micross.com/distribution.aspx