2N4416A_TO-18 Datasheet, PDF (1/1 Pages) Micross Components – a N-Channel high frequency JFET amplifier

2N4416A
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4416A
The 2N4416A is a N-Channel high frequency JFET amplifier
The 2N4416A N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The hermetically sealed TO-18 package is well suited
for military applications and harsh environment
applications.
2N4416A Benefits:
ƒ Wideband High Gain
ƒ Very High System Sensitivity
ƒ High Quality of Amplification
ƒ High-Speed Switching Capability
ƒ High Low-Level Signal Amplification
2N4416A Applications:
ƒ High-Frequency Amplifier / Mixer
ƒ Oscillator
ƒ Sample-and-Hold
ƒ Very Low Capacitance Switches
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4416A
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
10dB (min)
4dB (max)
‐65°C to +200°C
‐55°C to +135°C
300mW
10mA
‐35V
2N4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BV_GSS
Gate to Source Breakdown Voltage ‐35
‐‐
‐‐
V
I_G = ‐1µA, V_DS = 0V
Click VGS(off)
I_DSS
I_GSS
g_fs
g_os
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current
Forward Transconductance
Output Conductance
‐2.5
5
‐‐
4500
‐‐
C_iss
Input Capacitance²
‐‐
C_rss
Reverse Transfer Capacitance²
‐‐
C_oss
Output Capacitance²
‐‐
To ^‐‐
‐6
‐‐
15
‐‐
‐0.1
‐‐
7500
‐‐
50
‐‐
0.8
‐‐
4
‐‐
2
Buy ^V
V_DS = 15V, I_D = 1nA
mA
V_DS = 15V, V_GS = 0V
nA
V_GS = ‐20V, V_DS = 0V
µS
V_DS = 15V, V_GS = 0V, f = 1kHz
µS
pF
pF
V_DS = 15V, V_GS = 0V, f = 1MHz
pF
e_n
Equivalent Input Noise Voltage
‐‐
6
‐‐
nV/√Hz
V_DS = 10V, V_GS = 0V, f = 1kHz
2N4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
100 Mhz
400 Mhz
UNITS
CONDITIONS
MIN MAX MIN MAX
g_Iss
Input Conductance
‐‐
100
‐‐
1000
b_Iss
Input Susceptance²
‐‐
2500
‐‐
10000
µS
g_oss
Output Conductance
‐‐
75
‐‐
100
b_oss
Output Susceptance²
‐‐
1000
‐‐
4000
V_DS = 15V, V_GS = 0V
G_fs
Forward Transconductance
‐‐
‐‐
4000
‐‐
G_ps
Power Gain²
18
‐‐
10
‐‐
dB
V_DS = 15V, I_D = 5mA
NF
Noise Figure²
‐‐
2
‐‐
4
V_DS = 15V, I_D = 5mA, R_G = 1kΩ
NOTES
1 . Absolute maximum ratings are limiting values above which 2N4416A serviceability may be impaired.
2. Not production tested, guaranteed by design
Micross Components Europe
Available Packages:
2N4416A in TO-18
2N4416A in bare die.
TO-18 (Bottom View)
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Email: [e-mail] Web: www.micross.com/distribution.aspx