2N4392 Datasheet, PDF (1/1 Pages) Seme LAB – JFET SWITCHING N CHANNEL- DEPLETION

2N4392
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix 2N4392
The 2N4392 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4392
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
r_DS(on) ≤ 60Ω
I_D(off) = 5pA
2N4392 Benefits:
ƒ Low Error Voltage
ƒ High-Speed Analog Circuit Performance
ƒ Negligible “Off-Error,” Excellent Accuracy
ƒ Good Frequency Response, Low Glitches
ƒ Eliminates Additional Buffering
FAST SWITCHING
t_(ON) ≤= 15ns
ABSOLUTE MAXIMUM RATINGS¹ @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
‐65°C to +200°C
‐55°C to +200°C
2N4392 Applications:
ƒ Analog Switches
ƒ Choppers, Sample-and-Hold
ƒ Normally “On” Switches, Current Limiters
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
1800mW
I_G = 50mA
Gate to Drain Voltage / Gate to Source Voltage
‐40V
2N4392 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BV_GSS
Gate to Source Breakdown Voltage ‐40
‐‐
‐‐
V_GS(off)
Gate to Source Cutoff Voltage
‐2
‐‐
‐5
V
I_G = ‐1µA, V_DS = 0V
V_DS = 20V, I_D = 1nA
V_GS(F)
Gate to Source Forward Voltage
‐‐
0.7
1
V_DS(on)
Drain to Source On Voltage
‐‐
0.25
‐‐
I_G = 1mA, V_DS = 0V
V_GS = 0V, I_D = 3mA
V_DS(on)
Drain to Source On Voltage
‐‐
0.3
0.4
V_GS = 0V, I_D = 6mA
V_DS(on)
Drain to Source On Voltage
‐‐
0.35
‐‐
I_DSS
Drain to Source Saturation Current² 25
‐‐
75
mA
V_GS = 0V, I_D = 12mA
V_DS = 20V, V_GS = 0V
I_GSS
Gate Reverse Current
‐‐
‐5
‐100
V_GS = ‐20V, V_DS = 0V
I_G
Gate Operating Current
‐‐
‐5
‐‐
V_DG = 15V, I_D = 10mA
‐‐
5
‐‐
pA
V_DS = 20V, V_GS = ‐5V
Click To Buy ^ID(off)
Drain Cutoff Current
‐‐
5
100
‐‐
5
‐‐
r_DS(on)
Drain to Source On Resistance
‐‐
‐‐
60
2N4392 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
Ω
UNITS
V_DS = 20V, V_GS = ‐7V
V_DS = 20V, V_GS = ‐12V
V_GS = 0V, I_D = 1mA
CONDITIONS
g_fs
Forward Transconductance
6
‐‐
‐‐
mS
V_DS = 20V, I_D = 1mA, f = 1kHz
g_os
Output Conductance
25
‐‐
‐‐
µS
V_DS = 20V, I_D = 1mA, f = 1kHz
r_ds(on)
Drain to Source On Resistance
‐‐
‐‐
60
Ω
V_GS = 0V, I_D = 0A, f = 1kHz
C_iss
Input Capacitance
12
‐‐
14
V_DS = 20V, V_GS = 0V, f = 1MHz
C_rss
3.3
‐‐
‐‐
C_rss
Reverse Transfer Capacitance
3.2
‐‐
3.5
pF
V_DS = 0V, V_GS = ‐5V, f = 1MHz
V_DS = 0V, V_GS = ‐7V, f = 1MHz
C_rss
2.8
‐‐
‐‐
V_DS = 0V, V_GS = ‐12V, f = 1MHz
e_n
Equivalent Input Noise Voltage
3
‐‐
‐‐
nV/√Hz
V_DS = 10V, I_D = 10mA, f = 1kHz
2N4392 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
UNITS
CONDITIONS
t_d(on)
t_r
t_d(off)
t_f
Turn On Time
Turn Off Time
2
‐‐
15
2
‐‐
5
ns
6
‐‐
35
13
‐‐
20
V_DD = 10V, V_GS(H) = 0V
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
2N4392 SWITCHING CIRCUIT PARAMETERS
SWITCHING CIRCUIT
V_GS(L)
R_L
I_D(on)
‐7V
1600Ω
6mA
TO-18 (Bottom View)
Micross Components Europe
Available Packages:
2N4392 in TO-18
2N4392 in bare die.
Contact Micross for full package and die dimensions
Tel: [phone]
Email: [e-mail]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.