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2N4391 Datasheet, PDF (1/1 Pages) Seme LAB – JFET SWITCHING N CHANNEL- DEPLETION | |||
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2N4391
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix 2N4391
The 2N4391 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4391
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
rDS(on) ⤠30Ω
ID(off) = 5pA
2N4391 Benefits:
 Low Error Voltage
 High-Speed Analog Circuit Performance
 Negligible âOff-Error,â Excellent Accuracy
 Good Frequency Response, Low Glitches
 Eliminates Additional Buffering
FAST SWITCHING
t(ON) â¤= 15ns
ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
â65°C to +200°C
â55°C to +200°C
2N4391 Applications:
 Analog Switches
 Choppers, Sample-and-Hold
 Normally âOnâ Switches, Current Limiters
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
1800mW
IG = 50mA
Gate to Drain Voltage / Gate to Source Voltage
â40V
2N4391 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage â40
ââ
ââ
VGS(off)
Gate to Source Cutoff Voltage
â4
ââ
â10
V
IG = â1µA, VDS = 0V
VDS = 20V, ID = 1nA
VGS(F)
Gate to Source Forward Voltage
ââ
0.7
1
VDS(on)
Drain to Source On Voltage
ââ
0.25
ââ
IG = 1mA, VDS = 0V
VGS = 0V, ID = 3mA
VDS(on)
Drain to Source On Voltage
ââ
0.3
ââ
VGS = 0V, ID = 6mA
VDS(on)
Drain to Source On Voltage
ââ
0.35
0.4
IDSS
Drain to Source Saturation Current2 50
ââ
150
mA
VGS = 0V, ID = 12mA
VDS = 20V, VGS = 0V
IGSS
Gate Reverse Current
ââ
â5
â100
VGS = â20V, VDS = 0V
IG
Gate Operating Current
ââ
â5
ââ
VDG = 15V, ID = 10mA
ââ
5
ââ
pA
VDS = 20V, VGS = â5V
Click To Buy ID(off)
Drain Cutoff Current
ââ
5
ââ
ââ
5
100
rDS(on)
Drain to Source On Resistance
ââ
ââ
30
2N4391 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
Ω
UNITS
VDS = 20V, VGS = â7V
VDS = 20V, VGS = â12V
VGS = 0V, ID = 1mA
CONDITIONS
gfs
Forward Transconductance
6
ââ
ââ
mS
VDS = 20V, ID = 1mA, f = 1kHz
gos
Output Conductance
25
ââ
ââ
µS
VDS = 20V, ID = 1mA, f = 1kHz
rds(on)
Drain to Source On Resistance
ââ
ââ
30
Ω
VGS = 0V, ID = 0A, f = 1kHz
Ciss
Input Capacitance
12
ââ
14
VDS = 20V, VGS = 0V, f = 1MHz
Crss
3.3
ââ
ââ
Crss
Reverse Transfer Capacitance
3.2
ââ
ââ
pF
VDS = 0V, VGS = â5V, f = 1MHz
VDS = 0V, VGS = â7V, f = 1MHz
Crss
2.8
ââ
3.5
VDS = 0V, VGS = â12V, f = 1MHz
en
Equivalent Input Noise Voltage
3
ââ
ââ
nV/âHz
VDS = 10V, ID = 10mA, f = 1kHz
2N4391 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
UNITS
CONDITIONS
td(on)
tr
td(off)
tf
Turn On Time
Turn Off Time
2
ââ
15
2
ââ
5
ns
6
ââ
20
13
ââ
15
VDD = 10V, VGS(H) = 0V
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired
2. Pulse test: PW ⤠300µs, Duty Cycle ⤠3%
2N4391 SWITCHING CIRCUIT PARAMETERS
SWITCHING CIRCUIT
VGS(L)
RL
ID(on)
â12V
800Ω
12mA
TO-18 (Bottom View)
Micross Components Europe
Available Packages:
2N4391 in TO-18
2N4391 in bare die.
Contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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