APTGV50H120T3G Datasheet, PDF (9/9 Pages) Microsemi Corporation – Full - Bridge NPT & Trench + Field Stop® IGBT Power module

APTGV50H120T3G
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
Operating Frequency vs Collector Current
120
100
80
ZVS
60
V_CE = 600V
D = 50%
R_G = 5Ω
T_J = 125°C
T_C= 75°C
40
ZCS
20 _Hard
switching
0
10
20
30
40
50
60
I_C, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
0.9
0.35
0.3
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05 _0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
7.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage
80
60
T_J=125°C
40
T_J=25°C
20
T_J=-55°C
0
0.0
1.0
2.0
3.0
4.0
V_F, Anode to Cathode Voltage (V)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.2
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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