APT25GT120BRDL Datasheet, PDF (8/9 Pages) Microsemi Corporation – Resonant Mode IGBT

60
T_J= 125°C
50
T_J= 55°C
40
T_J= 25°C
30
T_J= 150°C
20
10
0
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
5000
T_J = 125°C
V_R = 800V
30A
4000
3000
2000
15A
7.5A
1000
0
0
200 400 600 800 1000
-di_F/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
0.8
I_RRM
t_RR
0.6
Q_RR
0.4
0.2
0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
600
500
400
300
200
100
0 _{0 100 200 300 400 500 600 700 800}
V_R, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
800
30A
700
15A
600
7.5A
500
APT25GT120BRDL(G)
T_J = 125°C
V_R = 800V
400
300
200
100
0
0
200 400 600 800 1000
-di_F/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
30
T_J = 125°C
V_R = 800V
25
30A
15A
20
7.5A
15
10
5
0
0
200 400 600 800 1000
-di_F/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
45
40
35
30
25
20
15
10
5 ^{Duty cycle = 0.5}
T_J = 45°C
0
25
50
75
100 125 150
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature