APTM20DHM16T3G Datasheet, PDF (7/7 Pages) Microsemi Corporation – Asymmetrical - Bridge MOSFET Power Module

APTM20DHM16T3G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.9
0.5
0.7
0.4
0.3
0.5
0.2
0.3
0.1
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
200
150
100
T_J=125°C
T_J=25°C
50
Trr vs. Current Rate of Charge
120
100 A
T_J=125°C
V_R=133V
100
130 A
80
50 A
60
0
0.0
0.5
1.0
1.5
V_F, Anode to Cathode Voltage (V)
2.00
1.75
1.50
Q_RR vs. Current Rate Charge
T_J=125°C
V_R=133V
130 A
100 A
50 A
1.25
1.00
0.75
0.50
0
200 400 600 800 1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
3200
2800
2400
2000
1600
1200
800
400
0
1
10
100
V_R, Reverse Voltage (V)
1000
40
0
200 400 600 800 1000 1200
-di_F/dt (A/µs)
I_RRM vs. Current Rate of Charge
50
T_J=125°C
40 ^VR=133V
130 A
100 A
50 A
30
20
10
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Max. Average Forward Current vs. Case Temp.
150
Duty Cycle = 0.5
125
T_J=150°C
100
75
50
25
0
25
50
75 100 125 150
Case Temperature (°C)
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