APT20GN60BDQ1 Datasheet, PDF (7/9 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
APT20GN60BD_SDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT20GN60BD_SDQ1(G) UNIT
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 129°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
15
30
Amps
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 20A
I_F = 40A
I_F = 20A, T_J = 125°C
2.18
2.76
1.75
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
15
ns
t_rr
Reverse Recovery Time
-
19
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 15A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
-
21
nC
-
2
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
105
ns
I_F = 15A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
250
nC
-
5
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
55
I_F = 15A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
420
-
15
ns
nC
Amps
1.40
1.20
D = 0.9
1.00
0.7
0.80
0.5
0.60
0.3
0.40
Note:
t1
t2
0.20
0.1
Duty Factor D = ^t1/t2
SINGLE PULSE
0.05
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION