APTM50DDA10T3G Datasheet, PDF (6/6 Pages) Microsemi Corporation – Dual Boost chopper MOSFET Power Module

Delay Times vs Current
80
60
V_DS=333V
R_G=5Ω
40 _TJ=125°C
L=100µH
20
td(off)
td(on)
0
10 20 30 40 50 60 70
I_D, Drain Current (A)
Switching Energy vs Current
2
V_DS=333V
1.6
R_G=5Ω
E_on
T_J=125°C
L=100µH
1.2
0.8
E_{of f}
0.4
0
10 20 30 40 50 60
I_D, Drain Current (A)
Operating Frequency vs Drain Current
450
400
350
300
ZCS
250
200
150
hard
100
switching
50
V_DS=333V
D=50%
R _G=5Ω
T_J=125°C
T_C=75°C
ZVS
0
5 10 15 20 25 30 35
I_D, Drain Current (A)
APTM50DDA10T3G
Rise and Fall times vs Current
100
V_DS=333V
80 ^RG=5Ω
T_J=125°C
L=100µH
t_f
60
40
20
t_r
0
10 20 30 40 50 60 70
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
2.5
V_DS=333V
E_off
2 ^ID=35A
T_J=125°C
1.5 ^L=100µH
1
E_on
0.5
E_off
0
0
10 20 30 40 50
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
T_J=150°C
10
T_J=25°C
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V_SD, Source to Drain Voltage (V)
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