APTM20TDUM16PG Datasheet, PDF (6/8 Pages) Microsemi Corporation – Triple dual common source MOSFET Power Module

Delay Times vs Current
120
100
80
V_DS=133V
60 ^RG=5Ω
T_J=125°C
40 ^L=100µH
t _{d(of f)}
t_d(on)
20
0
0 25 50 75 100 125 150 175
I_D, Drain Current (A)
Switching Energy vs Current
2
V_DS=133V
RG=5Ω
1.5 T_J=125°C
L=100µH
1
E_off
E_on
0.5
0
0
E_off
25 50 75 100 125 150 175
I_D, Drain Current (A)
Operating Frequency vs Drain Current
300
250
200
ZCS
150
V_DS=133V
ZVS
100 D=50%
R_G=5Ω
50 TJ=125°C
T_C=75°C
Hard
switching
0
25 38 50 63 75 88 100
I_D, Drain Current (A)
APTM20TDUM16PG
Rise and Fall times vs Current
160
140
V_DS=133V
R _G=5Ω
120 ^TJ^=125°C
t_f
L=100µH
100
80
60
t_r
40
20
0
0 25 50 75 100 125 150 175
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
3
V_DS=133V
2.5 ^ID=104A
T_J=125°C
E_off
L=100µH
2
1.5
E_on
1
0.5
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V_SD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6–8