APTM20HM20FTG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module

Delay Times vs Current
90
80
70
60 ^VDS=133V
R_G=5Ω
50 T_J=125°C
40 ^L=100µH
td_{(of f)}
30
td_(on)
20
10
0
25 50 75 100 125 150
I_D, Drain Current (A)
1200
1000
800
Switching Energy vs Current
V_DS=133V
RG=5Ω
T_J=125°C
L=100µH
E_on
E_off
600
400
200
0
0 25 50 75 100 125 150
I_D, Drain Current (A)
Operating Frequency vs Drain Current
350
V_DS=133V
300
D=50%
250
R_G=5Ω
T_J=125°C
200
T_C=75°C
ZVS
150
ZCS
100
50
Hard
switching
0
10 20 30 40 50 60 70 80
I_D, Drain Current (A)
APTM20HM20FTG
Rise and Fall times vs Current
160
V_DS=133V
140 _RG=5Ω
t_f
120 ^TJ=125°C
L=100µH
100
80
t_r
60
40
20
0
0 25 50 75 100 125 150
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
1500
1250
1000
V_DS=133V
I_D=75A
TJ=125°C
L=100µH
E_{of f}
E_on
750
500
E_off
250
0
5 10 15 20 25 30 35 40
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
T_J=150°C
10
T_J=25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
V_SD, Source to Drain Voltage (V)
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