APTM120UM95FAG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Single Switch MOSFET Power Module

Delay Times vs Current
180
t_d(off)
150
120
V_DS=800V
90 ^RG^=0.8Ω
T_J=125°C
60 L=100µH
30
t_d(on)
0
30 60 90 120 150 180 210
I_D, Drain Current (A)
Switching Energy vs Current
18
V_DS=800V
15 R_G=0.8Ω
T_J=125°C
12 _L=100µH
9
E_on
E_{of f}
6
3
0
30 60 90 120 150 180 210
I_D, Drain Current (A)
Operating Frequency vs Drain Current
250
200
ZCS
150
100 ^VDS=800V
D=50%
R _G=0.8Ω
50 TJ=125°C
T_C=75°C
Hard
switching
ZVS
0
10 25 40 55 70 85 100
I_D, Drain Current (A)
APTM120UM95FAG
Rise and Fall times vs Current
80
V_DS=800V
t_f
R_G=0.8Ω
60 ^TJ^=125°C
L=100µH
40
t_r
20
0
30 60 90 120 150 180 210
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
20
V_DS=800V
I_D=103A
16
T_J=125°C
E_{of f}
L=100µH
12
E_on
8
E_off
4
0.0 1.2 2.4 3.6 4.8 6.0
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V_SD, Source to Drain Voltage (V)
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