APTM10DUM05TG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Dual common source MOSFET Power Module

Delay Times vs Current
350
300
250
V_DS=66V
200 R_G=2.5Ω
T_J=125°C
150 _L=100µH
100
t _{d(off )}
t_d(on)
50
0
0
100
200
300
400
I_D, Drain Current (A)
Switching Energy vs Current
3
V_DS=66V
2.5 R_G=2.5Ω
T_J=125°C
E_off
2 L=100µH
1.5
E_on
1
0.5
0
0
E_{of f}
100
200
300
400
I_D, Drain Current (A)
Operating Frequency vs Drain Current
100
80
ZCS
60
Hard
switching
ZVS
40 ^VDS=66V
D=50%
R_G=2.5Ω
20 _TJ=125°C
T_C=75°C
0
50
100
150
200
250
I_D, Drain Current (A)
APTM10DUM05TG
Rise and Fall times vs Current
250
V_DS=66V
200 ^RG=2.5Ω
t_r
T_J=125°C
L=100µH
150
t_f
100
50
0
0
100
200
300
400
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
5
V_DS=66V
4 ^ID=200A
E_off
T_J=125°C
L=100µH
3
2
E_on
1
0
0
5 10 15 20 25 30
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, Source to Drain Voltage (V)
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