APTGF90H60T3G Datasheet, PDF (6/7 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module

APTGF90H60T3G
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
Operating Frequency vs Collector Current
240
200
ZVS
160
ZCS
120
V_CE = 400V
D = 50%
R_G = 1.2Ω
T_J = 125°C
T_C= 75°C
80
40
hard
switching
0
0
40
80 120 160 200
I_C, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3 _0.9
0.25
0.7
0.2
0.5
0.15
0.1 ^0.3
0.05 ^0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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