APTGF50H60T1G Datasheet, PDF (6/6 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module

APTGF50H60T1G
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
100
0
Cres
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
Operating Frequency vs Collector Current
240
V_CE = 400V
200
D = 50%
R_G = 2.7Ω
160
T_J = 125°C
T_C= 75°C
120
80
40
0
0
hard
switching
ZVS
ZCS
20
40
60
80 100
I_C, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5 _0.9
0.4 _0.7
0.3 _0.5
0.2 _0.3
0.1 _0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6–6