APTGF180DA60TG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Boost chopper NPT IGBT Power Module

APTGF180DA60TG
Capacitance vs Collector to Emitter Voltage
100000
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
450
400
350
300
250
200
150
100
50
0
0
Reverse Bias Safe Operating Area
200
400
600
800
V_CE, Collector to Emitter Voltage (V)
0.16
0.14 ^0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.7
0.1
0.5
0.08
0.06 _0.3
0.04
0.02
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
180
V_CE = 400V
150
D = 50%
RG = 2.5Ω
120
T_J = 125°C
ZCS
Tc=75°C
90
60
ZVS
30
Hard
switching
0
40
80
120 160 200 240
IC, Collector Current (A)
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