APTGF100DA120TG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Boost chopper NPT IGBT Power Module

APTGF100DA120TG
Capacitance vs Collector to Emitter Voltage
10000
Cies
Reverse Bias Safe Operating Area
250
200
1000
150
Coes
100
Cres
50
100
0
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
0
0
400
800
1200
V_CE, Collector to Emitter Voltage (V)
0.25
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
V_CE = 600V
100
D = 50%
R_G = 2.5Ω
80
T_J = 125°C
T_C = 75°C
60
ZVS
40
Hard
ZCS
20 ^switching
0
10
30
50
70
90 110
IC, Collector Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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