APTC80TDU15PG Datasheet, PDF (6/6 Pages) Microsemi Corporation – Triple dual Common Source Super Junction MOSFET Power Module

APTC80TDU15PG
Delay Times vs Current
100
t _{d(of f)}
80
V_DS=533V
60 ^RG=2.5Ω
T_J=125°C
L=100µH
40
20
t_d(on)
0
10
20
30
40
50
I_D, Drain Current (A)
1500
1200
900
Switching Energy vs Current
V_DS=533V
R_G=2.5Ω
T_J=125°C
E_on
L=100µH
600
E_off
300
0
10
20
30
40
50
I_D, Drain Current (A)
Operating Frequency vs Drain Current
400
350
ZVS
V_DS=533V
D=50%
300
R_G=2.5Ω
250
T_J=125°C
T_C=75°C
200
ZCS
150
Hard
switching
100
50
0
6 8 10 12 14 16 18 20 22 24 26
I_D, Drain Current (A)
Rise and Fall times vs Current
50
t_f
40
30
V_DS=533V
R_G=2.5Ω
20 _TJ=125°C
t_r
L=100µH
10
0
10
20
30
40
50
I_D, Drain Current (A)
2500
2000
1500
Switching Energy vs Gate Resistance
V_DS=533V
I_D=28A
T_J=125°C
L=100µH
E_on
1000
E_on
500
E_off
0
0
5
10
15 20 25
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
T_J=150°C
10
T_J=25°C
1
0.2
0.6
1
1.4
1.8
V_SD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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