APTC60HM45SCTG Datasheet, PDF (6/8 Pages) Microsemi Corporation – Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Coss
10000
Ciss
1000
100
Crss
10
0
10 20 30 40 50
V_DS, Drain to Source Voltage (V)
APTC60HM45SCTG
ON resistance vs Temperature
3.0
V_GS=10V
2.5 _{ID= 50A}
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 ^{limited by RDSon}
100 µs
10
Single pulse
T_J=150°C
T_C=25°C
1 ms
10 ms
1
1
10
100
1000
V_DS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
I_D=50A
10 _TJ=25°C
V_DS=120V
V_DS=300V
8
V_DS=480V
6
4
2
0
0 20 40 60 80 100 120 140 160
Gate Charge (nC)
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