APTGT50DH120T3G Datasheet, PDF (5/5 Pages) Microsemi Corporation – Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module

APTGT50DH120T3G
Operating Frequency vs Collector Current
70
60
V_CE=600V
D=50%
50
ZCS
R_G=18Ω
T_J=125°C
40
T_C=75°C
30
ZVS
20
10
hard
switching
0
10 20 30 40 50 60 70 80
I_C (A)
Forward Characteristic of diode
100
80
60
40
20
0
0
T_J=125°C
T_J=125°C
T_J=25°C
0.5
1
1.5
2
2.5
V_F (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7 _0.9
0.6
0.7
0.5
0.4 ^0.5
Diode
0.3 _0.3
0.2
0.1
0.1 _0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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