APTGT400U120D4G Datasheet, PDF (5/5 Pages) Microsemi Corporation – Single switch Trench + Field Stop IGBT Power Module

APTGT400U120D4G
Operating Frequency vs Collector Current
50
V_CE=600V
D=50%
40
R_G=1.8 Ω
T_J=125°C
30
ZVS
Tc=75°C
ZCS
20
10
Hard
switching
0
0
100 200 300 400 500
I_C (A)
Forward Characteristic of diode
800
T_J=25°C
600
400
200
T_J=125°C
T_J=25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
V_F (V)
0.15
0.125
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.1 0.7
0.075 0.5
0.05 ^0.3
0.025 ^0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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