English
Language : 

APTGT400A120G Datasheet, PDF (5/5 Pages) Microsemi Corporation – Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT400A120G
Operating Frequency vs Collector Current
60
50
ZVS
40
ZCS
30
VCE=600V
D=50%
RG=1.2Ω
TJ= 125°C
Tc=75°C
20
10 Hard
switching
0
0
100 200 300 400 500
IC (A)
800
700
600
500
400
300
200
100
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ= 125°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12 0.9
Diode
0.1 0.7
0.08 0.5
0.06
0.3
0.04
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5