APTGF25DDA120T3G Datasheet, PDF (5/6 Pages) Microsemi Corporation – Dual Boost Chopper NPT IGBT Power Module

Turn-On Delay Time vs Collector Current
75
V_CE = 600V
70 ^RG ^{= 22Ω}
65
VGE = 15V
60
55
50
5
15
25
35
45
55
I_CE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
160
120
V_CE = 600V
R_G = 22Ω
80
V_GE=15V
40
0
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
10
V_CE = 600V
8 ^RG ^{= 22Ω}
T_J=125°C,
V_GE=15V
6
T_J=25°C,
4
V_GE =1 5V
2
0
5
15
25
35
45
55
I_CE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
5
VCE = 600V
4
V_GE = 15V
T_J= 125°C
Eon, 25A
3
2
Eoff, 25A
1
0
0
10 20 30 40 50 60
Gate Resistance (Ohms)
APTGF25DDA120T3G
Turn-Off Delay Time vs Collector Current
400
350
V_GE=15V,
T_J=125°C
300
250
V_CE = 600V
R_G = 22Ω
200
V_GE=15V,
T_J=25°C
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
45
TJ = 125°C
40
35
T_J = 25°C
30
25
VCE = 600V, VGE = 15V, RG = 22Ω
20
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
4
V_CE = 600V
V_GE = 15V
3
R_G = 22Ω
T_J = 125°C
2
TJ = 25°C
1
0
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
60
50
40
30
20
10
0
0
400
800
1200
V_CE, Collector to Emitter Voltage (V)
www.microsemi.com
5-6