APTGF150DU120TG Datasheet, PDF (5/5 Pages) Microsemi Corporation – Dual common source NPT IGBT Power Module

APTGF150DU120TG
Operating Frequency vs Collector Current
90
80
VCE=600V
D=50%
70
R_G=5.6 Ω
60
ZVS
T_J=125°C
50
ZCS
T_C=75°C
40
30
hard
20 ^switching
10
0
0
40
80 120 160 200
I_C (A)
Forward Characteristic of diode
250
200
150
TJ= 125°C
100
50
TJ=25°C
0
0 0.5 1 1.5 2 2.5 3
V_F (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3 ^0.9
Diode
0.25 0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05 _0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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