APTGF150A120T3AG Datasheet, PDF (5/5 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module Power Module

APTGF150A120T3AG
Operating Frequency vs Collector Current
180
150
ZVS
120
ZCS
V_CE=600V
D=50%
R_G=5.6 Ω
T_J=125°C
T_C=75°C
90
60
30
hard
switching
0
0
40
80 120 160 200
I_C (A)
Forward Characteristic of diode
300
250
200
150
T_J=125°C
100
50
T_J=25°C
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35 0.9
Diode
0.3 _0.7
0.25
0.2 ^0.5
0.15 _0.3
0.1
0.05 ^0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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