APTC60HM70T3G Datasheet, PDF (5/6 Pages) Microsemi Corporation – Full - Bridge Super Junction MOSFET Power Module

Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
100
Crss
10
0 10 20 30 40 50
V_DS, Drain to Source Voltage (V)
APTC60HM70T3G
ON resistance vs Temperature
3.0
V_GS=10V
2.5 _{ID= 39A}
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by RDSon
100 µs
10
1
1
Single pulse
T_J=150°C
T_C=25°C
1 ms
10 ms
10
100
1000
V_DS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12 ^ID=39A
T_J=25°C
V_DS=120V
10
V_DS=300V
8
V_DS=480V
6
4
2
0
0 50 100 150 200 250 300
Gate Charge (nC)
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5-6