APT50GN60B Datasheet, PDF (5/6 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
5,000
C_ies
1,000
500
100
50
C_0es
C_res
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT50GN60B_S(G)
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.45
0.40
D = 0.9
0.35
0.30
0.7
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
SINGLE PULSE
0.1
0.05
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
110
50
F
max
=
min
(f_max,
f
max2⁾
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
T_J = 125°C
10 ^TC ^{= 75°C}
f_max2 =
P_diss - P _cond
E _on2 + E _off
D = 50 %
V_CE = 400V
6 ^{RG = 4.3Ω}
P_diss =
T_J - T _C
R _θJC
10 20 30 40 50 60 70 80
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current