APTM50H10FT3G Datasheet, PDF (4/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module

APTM50H10FT3G
Typical Performance Curve
0.45
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4 0.9
0.35
0.3 ^0.7
0.25 _0.5
0.2
0.15 ^0.3
0.1
0.05
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
140
V_GS=10&15V
120
8V
7.5V
100
7V
80
60
6.5V
40
6V
20
5.5V
0
0
5
10 15 20 25
V_DS, Drain to Source Voltage (V)
1.20
1.15
R_DS(on) vs Drain Current
Normalized to
V_GS=10V @ 18.5A
V_GS=10V
1.10
1.05
1.00
V_GS=20V
0.95
0.90
0
20
40
60
80
I_D, Drain Current (A)
Transfert Characteristics
120
V_DS > I_D(on)xR_DS(on)MAX
100 250µs pulse test @ < 0.5 duty cycle
80
60
40
T_J=25°C
20
0
0
T_J=125°C
T_J=-55°C
12345678
V_GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
40
30
20
10
0
25
50
75 100 125 150
T_C, Case Temperature (°C)
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