APTM20UM03FAG Datasheet, PDF (4/6 Pages) Microsemi Corporation – Single Switch MOSFET Power Module

APTM20UM03FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.06
0.9
0.05
0.04 ^0.7
0.03 ^0.5
0.02 0.3
0.01 0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
4000
V_GS=15V
10V
3000
9V
2000
1000
8.5V
8V
7.5V
7V
6.5V
0
0 4 8 12 16 20 24 28
V_DS, Drain to Source Voltage (V)
R_DS(on) vs Drain Current
1.2
Normalized to
V_GS=10V @ 290A
1.1
VGS=10V
1
VGS=20V
0.9
0.8
0
225
450
675
900
I_D, Drain Current (A)
1400
1200
1000
Transfert Characteristics
V_DS > I_D(on)xR_DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
800
600
400
T_J=25°C
200
T_J=125°C
T_J=-55°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
600
500
400
300
200
100
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
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