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APTM20SKM08TG Datasheet, PDF (4/6 Pages) Microsemi Corporation – Buck chopper MOSFET Power Module
APTM20SKM08TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16 0.9
0.14
0.12 0.7
0.1
0.5
0.08
0.06 0.3
0.04
0.1
0.02
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
1400
VGS=15V
1200
10V
1000
800
9V
8.5V
600
8V
400
7.5V
7V
200
6.5V
0
0 4 8 12 16 20 24 28
VDS, Drain to Source Voltage (V)
RDS(on) vs Drain Current
1.2
Normalized to
VGS=10V @ 104A
1.1
VGS=10V
1
VGS=20V
0.9
0.8
0
50 100 150 200 250 300
ID, Drain Current (A)
Transfert Characteristics
600
VDS > ID(on)xRDS(on)MAX
500 250µs pulse test @ < 0.5 duty cycle
400
300
200
100
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
250
200
150
100
50
0
25 50 75 100 125 150
TC, Case Temperature (°C)
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