APTGT25A120T1G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Phase leg Fast Trench + Field Stop IGBT® Power Module

APTGT25A120T1G
Typical Performance Curve
Output Characteristics (V_GE=15V)
50
T_J=25°C
40
T_J=125°C
30
Output Characteristics
50
T_J = 125°C
V_GE=17V
40
V_GE=13V
30
V_GE=15V
20
20
V_GE=9V
10
10
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE (V)
0
0
1
2
3
4
V_CE (V)
Transfert Characteristics
50
40
T_J=25°C
30
T_J=125°C
20
10
T_J=25°C
0
5 6 7 8 9 10 11 12
V_GE (V)
Switching Energy Losses vs Gate Resistance
8
V_CE = 600V
7 _{VGE =15V}
Eon
6 ^IC ^{= 25A}
T_J = 125°C
5
4
Eoff
3
Eon
2
Er
1
0
0
40
80 120 160 200
Gate Resistance (ohms)
Energy losses vs Collector Current
6
V_CE = 600V
5 ^VGE ^{= 15V}
R_G = 27Ω
4 ^TJ ^{= 125°C}
Eon
Eoff
Eon
3
2
Er
1
0
0
10
20
30
40
50
I_C (A)
Reverse Bias Safe Operating Area
60
50
40
30
20 _VGE=15V
10
T_J=125°C
R_G=27Ω
0
0
300
600 900
V_CE (V)
1200 1500
0.9
0.8 _0.9
0.7
0.6 ^0.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
0.5 _0.5
0.4
0.3
0.3
0.2 _0.1
0.1 _0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4–5