APTGT150A170G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Phase leg Trench + Field Stop IGBT Power Module

APTGT150A170G
Typical Performance Curve
Output Characteristics (V_GE=15V)
300
250
TJ=25°C
200
TJ= 125°C
150
100
50
0
0
1
2
3
4
V_CE (V)
Output Characteristics
300
TJ = 125°C
250
VGE=20V
200
150
VGE=13V
VGE=15V
100
50
VGE= 9V
0
0
1
2
3
4
5
V_CE (V)
Transfert Characteristics
300
250
TJ=25°C
200
150
TJ=125°C
100
50 ^TJ=125°C
0
5 6 7 8 9 10 11 12 13
V_GE (V)
Switching Energy Losses vs Gate Resistance
120
VCE = 900V
100 _{VGE =15V}
Eon
I_C = 150A
80 _{TJ = 125°C}
60
Eoff
40
Er
20
0
0 5 10 15 20 25 30
Gate Resistance (ohms)
Energy losses vs Collector Current
120
100
VCE = 900V
VGE = 15V
Eon
RG = 4.7Ω
80 TJ = 125°C
Eoff
60
Er
40
20
0
0 50 100 150 200 250 300
I_C (A)
Reverse Bias Safe Operating Area
350
300
250
200
150
100
50
V GE=15V
TJ=125°C
R_G= 4. 7Ω
0
0
400
800 1200 1600 2000
V_CE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14 _0.9
IG BT
0.12
0.1
0.7
0.08 _0.5
0.06 _0.3
0.04
0.02 ^0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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